| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which can suppress a deterioration of an element characteristic. SOLUTION: This semiconductor laser element is provided with a pair of trenches 20 which are opposed to each other across a current injection area 70, also have a depth reaching a GaAs substrate 1 from an upper face of an element part 50, and are provided so as to extend in parallel to a side end of the element part 50. Further, steps 30a are provided on both-side ends of the element part 50 so as to extend in parallel to the trench 20, and in an area which is positioned beneath the bottom of the step 30a on the back of the GaAs substrate 1, a scribe line 40 is provided so as to extend in parallel to the step 30a. COPYRIGHT: (C)2008,JPO&INPIT
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