发明名称 DEFECT INSPECTION METHOD OF ELECTROLUMINESCENT DISPLAY, DEFECT CORRECTION METHOD, AND METHOD OF MANUFACTURING ELECTROLUMINESCENT DISPLAY
摘要 PROBLEM TO BE SOLVED: To accurately detect and correct a display defect of an EL display. SOLUTION: An element drive transistor for controlling a drive current to supply to an EL element is operated in its linear region and a demerit point defect due to short circuit of the EL element is detected based on the emission luminance or a cathode current when the EL element is made an emission level. In advance of this demerit point defect, a reverse bias voltage is impressed between an anode and a cathode of the EL element to actualize the demerit point defect. Thereby, by preventing that the demerit point defect disappears subsequently to make a laser repair impossible or the like, inspection and correction efficiency is improved. Furthermore, by operating the element drive transistor in its saturation region, a dark point defect due to characteristics fluctuation of the element drive transistor is detected based on the cathode current and the emission luminance when the EL element is made an emission level. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008066003(A) 申请公布日期 2008.03.21
申请号 JP20060239625 申请日期 2006.09.04
申请人 SANYO ELECTRIC CO LTD;SANYO SEMICONDUCTOR CO LTD 发明人 OGAWA TAKASHI
分类号 H05B33/12;H01L51/50;H05B33/10;H05B33/14 主分类号 H05B33/12
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