| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve light emitting efficiency by using a simple technology in a light emitting diode having a large number of nano-columns on one surface of a substrate. <P>SOLUTION: A substrate 1 for forming the nano-columns 2 is formed of a material having conductivity and transparency for the light emitting wavelength of a light emitting layer 4, an n-type electrode 7 having transparency for the wavelength of a light to be emitted from the light emitting layer 4 is formed on the other surface of the substrate 1, so that a current can be injected in the thickness direction of a device with a p-type electrode 6 formed on a p-type semiconductor layer 5. The substrate 1 is composed of Si-doped GaN, Ga<SB>2</SB>O<SB>3</SB>or ZnO. Thus, light is extracted from the n-type electrode 7 side and a heat radiation means 9 can be provided on the p-type electrode 6 side, and an injected current can be increased. Further, the necessity of removing some nano-columns 2 to form an n-type electrode is eliminated, and the electrode can be formed by a simple technology. <P>COPYRIGHT: (C)2008,JPO&INPIT |
