| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device and its read-out method where the reliability of reference resistance is high, and a read-out error can be prevented effectively, in a nonvolatile semiconductor memory device that uses a resistance memory element, storing a plurality of resistance states for which the resistance values are different. <P>SOLUTION: The nonvolatile semiconductor memory device uses the resistance memory element where the resistance memory material is held between a pair of electrodes and a resistance memory properties where the resistance state can be switched reversibly to a high-resistance state or to a low-resistance state is manifested by applying voltage. The device has a memory cell 10, having a resistance memory element 12 that manifests the resistance memory properties, and a reference cell 10<SB>R</SB>, which is referred to when read-out is performed from the memory cell 10 and has a reference resistance comprising a resistance memory element 12R where the resistance memory properties are not manifested. <P>COPYRIGHT: (C)2008,JPO&INPIT |
