| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a semiconductor device which does not generate an electrical short circuit between an upper electrode and a bit line contact plug even if a design dimension is miniaturized in a semiconductor device with a capacity element. <P>SOLUTION: The semiconductor device has a plurality of capacity elements 41, an upper insulating film 34 and a second layer insulating film 28 composed of different materials and formed on each capacity element 41, and a bit line contact plug 31 formed in a region between the capacity elements 41 and connected to a bit line 33. The upper electrode 27 has an upper electrode opening in a region wherein the bit line contact plug 31 is formed, and the diameter of the upper electrode opening is larger than that of a portion passing through the upper insulating film 34 in the bit line contact plug 31. <P>COPYRIGHT: (C)2008,JPO&INPIT |
