| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem of a performance improving technique in microfabrication of a semiconductor element using a high-energy ray, particularly KrF excimer laser light, an electron beam, an X-ray or EUV light, and to provide a positive resist composition excellent in line edge roughness, pattern profile, sensitivity, dissolution contrast, contrast, outgassing in exposure and PEB temperature dependency, and to provide a pattern forming method using the same. <P>SOLUTION: The positive resist composition comprises (A) a polymer having three or more polymer chains through at least one branch part and having solubility in an alkali developer increased by the action of an acid and (B) a specific sulfonium salt as a compound capable of generating an acid upon irradiation with an actinic ray or radiation. The pattern forming method using the same is also provided. <P>COPYRIGHT: (C)2008,JPO&INPIT |
