Method of Manufacturing Gate Contact of Semiconductor Device,申请号KR20060085133-传众专利搜索

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发明名称	Method of Manufacturing Gate Contact of Semiconductor Device
摘要
申请公布号	KR100815956(B1)	申请公布日期	2008.03.21
申请号	KR20060085133	申请日期	2006.09.05
申请人		发明人
分类号	H01L27/04;H01L21/336	主分类号	H01L27/04
代理机构		代理人
主权项
地址

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