| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method of the same having a high output resistance while maintaining a high mutual conductance by downscaling of an MIS (metal insulator semiconductor) type field effect transistor without employing an SOI (silicon on insulator) substrate. SOLUTION: An inversely conductive high concentration region for suppressing the stretch of a depletion layer is formed immediately below at least a drain layer while a threshold voltage regulating high concentration region, higher in impurity concentration than that of a channel region, is formed between a source region and the channel region. The forming of the regions is effected by ion pouring method. COPYRIGHT: (C)2008,JPO&INPIT
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