| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a flash memory device having improved reliability and its refresh method. <P>SOLUTION: The flash memory device includes a memory cell array comprising memory cells arranged in rows and columns, a page buffer circuit having a single latch structure and configured to read data from a selected memory cell in the memory cell array, and a controller controlling the page buffer circuit having the single latch structure so as to detect a memory cell in which electric charges loss is caused out of memory cells of the selected row. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
