| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic semiconductor thin film, along with its manufacturing method, of group II-IV-V<SB>2</SB>which is excellent in compatibility with a semiconductor process, and in which a substrate lattice-matches with the magnetic semiconductor thin film, with less variation of Tc near 300 K. SOLUTION: After a buffer layer is formed on the substrate that is heated, ZnSnAs<SB>2</SB>is epitaxial-grown to which a transition metal element is added as a magnetic semiconductor layer, on the buffer layer. The heating temperature of the substrate is 250-350°C. COPYRIGHT: (C)2008,JPO&INPIT
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