| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of reliably removing halide remained on the surface of a contact hole base, suppressing the rise of interfacial resistance, stabilizing contact resistance, and raising wiring reliability. SOLUTION: The method includes: a process for forming an interlayer insulating film 3 on a silicon substrate 1; a process for dry-etching the interlayer insulating film by etching gas containing halogen through the use of an organic mask R, and forming a contact hole h in the prescribed part of the interlayer insulating film; a process for peeling and removing an organic mask material; a process for performing ashing by oxygen plasma after coating a resist 8 containing OH or H on the interlayer insulating film including the contact hole; and a process for embedding a conductive material in the contact hole. COPYRIGHT: (C)2008,JPO&INPIT
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