| 发明名称 |
Multi-bit flash memory device and memory cell array |
| 摘要 |
A flash memory device comprises a plurality of memory blocks. A selected memory block among the plurality of memory blocks includes 2<SUP>n </SUP>pages of data. The selected memory block includes different types of memory cells capable of storing different numbers of bits.
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| 申请公布号 |
US2008062763(A1) |
申请公布日期 |
2008.03.13 |
| 申请号 |
US20060637791 |
申请日期 |
2006.12.13 |
| 申请人 |
PARK KI-TAE;KIM KI-NAM;LEE YEONG-TAEK |
发明人 |
PARK KI-TAE;KIM KI-NAM;LEE YEONG-TAEK |
| 分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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