| 摘要 |
An integrated circuit includes a non-volatile memory having memory cells, a memory cell selection circuit having selection blocks, a first device supplying a first voltage applicable to memory cells, a second device supplying a second voltage applicable to memory cells. Each memory cell selection block includes a first selection sub-block to link the memory cell to the first device and a second selection sub-block to link the memory cell to the second device. The first sub-block includes MOS transistors of a first type of conductivity, and the second sub-block includes MOS transistors of a second type of conductivity. Application may be particularly but not exclusively to phase change memories.
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