| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming method which can reduce an etching rate in a cleaning process to a relatively small rate even if a film is formed under a relatively low temperature, can improve film forming control in the cleaning process, and can form an insulating film that functions sufficiently as an etching stopper film, inter-layer insulating film, etc. SOLUTION: According to the film forming method, a silane-based gas, a nitride gas, a boron-containing gas, and a hydrocarbon gas are supplied to a process container 4, in which a plurality of workpieces W are stored to be ready for vacuumizing, to form a thin SiBCN film on a surface of the workpiece W. The film forming method includes a simultaneous gas supply step of selecting and supplying either of the boron-containing gas and the hydrocarbon gas and also supplying the silane-based gas simultaneously, a nonselected gas supply step of supplying the other gas that is not selected at the simultaneous gas supply step, and a nitride gas supply step of supplying the nitride gas. These steps are repeated in increasing order. COPYRIGHT: (C)2008,JPO&INPIT
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