| 摘要 |
A semiconductor memory device includes: a high voltage input pad for receiving a high voltage which has the highest voltage level among a plurality of voltages used for a data access operation; a core region for storing a plurality of data; a peripheral region including a circuit for accessing the data stored in the core region; a high voltage transfer unit for supplying the high voltage inputted through the high voltage input pad to at least one of the core region and the peripheral region; a core voltage generation unit for generating at least one first driving voltage used in the core region by using the high voltage; and a peripheral region voltage generation unit for generating at least one second driving voltage used in the peripheral region by using the high voltage.
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