发明名称 ANNEALING APPARATUS, ANNEALING METHOD, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 The present invention provides an annealing apparatus including a heating unit, a storage unit, a calculating unit, and a control unit. The heating unit anneals a target wafer. The storage unit stores reference data which a shape parameter of a reference element, an annealing temperature, and an electrical characteristic of the reference element are associated with one another. The reference data is obtained by measuring a wafer previously manufactured. The calculating unit determines an actual annealing temperature based on the reference data and measurement data to attain target electrical characteristic. The measurement data include a shape parameter of an element formed in the target wafer. The control unit controls the heating unit to anneal the target wafer at the actual annealing temperature.
申请公布号 US2008064128(A1) 申请公布日期 2008.03.13
申请号 US20070853183 申请日期 2007.09.11
申请人 NEC ELECTRONICS CORPORATION 发明人 ISHIGAKI HIROKAZU
分类号 H01L21/00;H05B6/00 主分类号 H01L21/00
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