DEVICE WITH PB-BASED HIGH-K DIELECTRIC THIN-FILM CAPACITOR COMPRISING PB-DONATING LAYERS

摘要

The present invention relates to a device comprising a semiconductor substrate layer and a capacitor with a metal bottom electrode layer, a metal top electrode layer and a lead-containing dielectric layer between the bottom and top electrode layers. A bottom lead-donating layer is arranged between the substrate layer and the bottom electrode layer, and a top lead-donating layer is arranged on top of the top electrode layer. This capacitor structure can be fabricated with a particularly high relative permittivity. The provision of the device of the first aspect of the invention is particularly useful in device applications that require capacitor structures with a high capacitance density, such as ESD protection and other filter applications.