| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a tunnel type magnetic detection element in which the increase in magnetostriction is low in a free magnetic layer and change rate in the resistance is high. <P>SOLUTION: In a tunnel type magnetic detection element comprising a fixed magnetic layer that has a fixed direction of magnetization, an insulation barrier layer, and a free magnetic layer having a direction of magnetization that is variable with external magnetic field formed sequentially from below, a first protective layer of magnesium (Mg) is formed on the free magnetic layer. As compared with conventional structures where the first protective layers are not formed or structures where the first protective layers are formed of Al, Ti, Cu or IrMn, magnetostriction is indicated low in the free magnetic layer and change rate in the resistance is high. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
