| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming film which can eliminate a TiN film forming process by thermal CVD method conventionally used for obtaining enough thickness as a barrier layer by using low-temperature processing tungsten film formation process. SOLUTION: The method of forming a predetermined film on the surface of an object W to be treated in a vessel capable of vacuum aspiration comprises a step of forming a titanium film 32 on the surface of the object, a step of forming a nitrided film 34 on the surface of the titanium film, and a step of forming a tungsten film 36 on the surface of the object at relatively low temperature by intermittently supplying the reducing gas and tungsten containing gas alternately one time or more. This method allows to obtain a tungsten film fully functional as a barrier layer can be formed. COPYRIGHT: (C)2008,JPO&INPIT
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