| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can be operated as a fully depleted element, corresponding to the scale down of the gate length and can reduce the heat built-up or substrate floating effect caused by Joule's heat. SOLUTION: This semiconductor device has a substrate projection section 31A formed on a p-type semiconductor substrate 11, a gate electrode 14 formed on the projection section 31A via a gate insulating film 13, source regions 15 and drain regions 16 formed in the projecting section 31A, so as to sandwich the gate electrode 14. This semiconductor device also has element isolation insulating films 12, formed on both sides of the substrate projection section 31A on the surface of the semiconductor substrate 11 and first and second impurity regions 17 formed in the semiconductor substrate 11 under the element isolation insulating films 12. The first and second impurity regions 17 are in contact with each other in the semiconductor substrate 11 under the substrate projection section 31A. The height and width of the substrate projection section 31A on which the gate electrode 14 is formed are shorter than those of the substrate projection section 31A on which the source regions 15 and drain regions 16 are formed. COPYRIGHT: (C)2008,JPO&INPIT
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