| 摘要 |
PROBLEM TO BE SOLVED: To provide a compact and inexpensive semiconductor device which is suitable for configuration of a switching circuit, and wherein a lateral MOS transistor capable of fast switching is formed and switching loss and surge voltage (noise) can be suppressed at the same time. SOLUTION: In the semiconductor device, the lateral MOS transistor LTa, a Zener diode ZDa and a capacitance element Ca are formed on a surface layer part of a semiconductor substrate. The Zener diode ZDa and the capacitance element Ca are directly connected between a drain D and a gate G of the lateral MOS transistor LTa, thereby the semiconductor device 101 is constituted. COPYRIGHT: (C)2008,JPO&INPIT
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