| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in simple structure with high breakdown voltage and low ON resistance. SOLUTION: A first conductivity-type drain drift layer 101 is formed on a surface of a first conductivity-type semiconductor substrate 100, a second conductivity-type well layer 102 is formed on a surface of the drift layer 101 sequentially, and a trench 106 including an insulating film 107 on an inner wall is formed from a surface of the well layer 102 to the drift layer 101. Inside the trench 106, a second conductivity-type embedded layer 108 is then formed from a bottom face of the trench 106 and further, a gate electrode 109 is formed to face the well layer 102 via the insulating film 107 from above the embedded layer 108. Continuously, a first conductivity-type source layer 103 is formed on the surface of the well layer 102 so that its upper face is positioned lower than an upper face of the gate electrode 109. COPYRIGHT: (C)2008,JPO&INPIT
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