| 摘要 |
PROBLEM TO BE SOLVED: To provide various circuits (e.g. sense amplifier circuit, equalizer circuit or positive potential converting circuit) required for reading data of a ferroelectric storage device. SOLUTION: A gate terminal of a (p) channel type MISFET (P1-L) and a second node (ML-R) of a ferroelectric storage device (sense amplifier circuit) are connected, the ferroelectric storage device having: the (p) channel type MISFET (P1-L) connected between a bit line (BL-L) and a first node (ML-L); a (p) channel type MISFET (P1-R) connected between a bit line (BL-R) and the second node (ML-R); a negative potential generating circuit (ct-L) connected to the first node; and a negative potential generating circuit (ct-R) connected to the second node, and a gate terminal of the (p) channel type MISFET (P1-R) and the first node (ML-L) are connected. An equalizer circuit EQ1 is provided between the first node and the second node. Potentials of the first and the second nodes are taken out as an output OUT of a positive potential by the positive potential converting circuit TP. COPYRIGHT: (C)2008,JPO&INPIT
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