| 摘要 |
A method for manufacturing the gate of the non-volatile memory device is characterized in in-situ etching a tungsten silicide film, polycrystalline silicon films, an ONO film, and a silicon oxide film with one step using one etchant having a lower etch selectivity on the silicon and oxide films in order to form the gate. As such, in-situ etching the material films for forming the gate with one step using an etchant having a low etch selectivity on the silicon and oxide films can prevent undercuts from occurring on an interface between two different material films to thereby improve cell distribution, minimize the occurrence of particles, and reduce processing time over a prior art.
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