| 摘要 |
The present invention provides an integrated transistor device comprising: a semiconductor substrate; a pillar formed in said semiconductor substrate; a gate trench surrounding said pillar; a first source/drain region formed in an upper region of said pillar; a gate dielectric formed on the bottom of said gate trench and surrounding a lower region of said pillar; a gate formed on said gate dielectric in said gate trench and surrounding a lower region of said pillar; and at least one second source/drain region formed in an upper region of said semiconductor substrate adjoining said gate trench. The present invention also provides a corresponding manufacturing method.
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