| 摘要 |
The present invention relates to an organic FET in which the interfaces (electrode interfaces) between a semiconductor layer and a source electrode and between a semiconductor layer and a drain electrode are improved by employing a novel technique to increase ON-state current (driving current) and to reduce contact resistance. The present invention provides an organic FET having: a substrate; a gate insulating film disposed on the substrate; a metal source electrode and a metal drain electrode disposed on the gate insulating film in such a manner that they face each other in a horizontal direction; and an organic semiconductor layer covering the gate insulating film, the source electrode and the drain electrode, wherein a first organic molecule layer and a second organic molecule layer are formed on the interfaces (electrode interfaces) between a semiconductor layer and a source electrode and between a semiconductor layer and a drain electrode.
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