发明名称 |
SELECTIVE SEALING OF POROUS DIELECTRIC MATERIALS |
摘要 |
This invention relates to materials and processes for selective deposition of silica films on non-metallic areas of substrates while avoiding any significant deposition on metallic conductive areas. Silica sealed the surface pores of a porous dielectric by the reaction of an aluminum-containing compound with an alkoxysilanol. Metal layers are protected from this deposition of silica by adsorption of a partially fluorinated alkanethiol. This invention provides processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. At the same time, a clean metal surface is produced, so that low electrical resistances of connections between copper layers are maintained. The combination of low-k dielectric constant and low resistance allows construction of microelectronic devices operating at high speeds. |
申请公布号 |
WO2008008319(A3) |
申请公布日期 |
2008.03.13 |
申请号 |
WO2007US15699 |
申请日期 |
2007.07.10 |
申请人 |
PRESIDENT AND FELLOWS OF HARVARD COLLEGE;GORDON, ROY, G.;HONG, DAEWON |
发明人 |
GORDON, ROY, G.;HONG, DAEWON |
分类号 |
C23C16/04;C23C16/02;C23C16/40;C23C16/455 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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