| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can form a gate insulating film having a high reliability. SOLUTION: In the method for manufacturing the semiconductor device having an element isolation structure of a shallow trench isolation system, after a trench 14 is formed on a surface of a silicon substrate 11; an inner surface 14a of the trench 14 is cleaned to remove a pollutant, and next a defective layer 15 of the inner surface 14a of the trench 14 is removed. In removing the defective layer 15, a fluorine element containing gas and oxygen gas are ionized at a substrate temperature of 200°C or less, and the inner surface 14a of the trench 14 is etched at about 5 nm by an isotropic etching by a generated radical. COPYRIGHT: (C)2008,JPO&INPIT
|
