发明名称 |
METHOD AND APPARATUS FOR PLANARIZING GAP-FILLING MATERIAL |
摘要 |
A method an apparatus for fabricating an interconnection structure. A substrate is provided with a dielectric layer thereon. The dielectric layer comprises at least one opening therein. A gap-filling material is applied on the substrate filling the at least one opening. The gap-filling material is planarized using a template to create a substantially planarized surface.
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申请公布号 |
US2008060534(A1) |
申请公布日期 |
2008.03.13 |
申请号 |
US20070927779 |
申请日期 |
2007.10.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN KUEI-SHUN;LIN CHIN-HSIANG;LIN T.H.;LIN CHIA-HSIANG |
分类号 |
B30B9/00 |
主分类号 |
B30B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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