| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a lithography apparatus which can reduce or prevent sputtering on optical component relevant to plasma. <P>SOLUTION: This lithography apparatus is a radiation source constituted so that the radiation for forming a radiation beam is emitted, wherein the radiation includes the radiation source which is a type of generating the plasma in a low-pressure environment in the lithography apparatus, and optical components constituted so that a pattern is given to a cross section of the radiation beam adjusted in order to form a radiation beam with the pattern, the radiation beam with the pattern is projected on a target portion of the substrate, and/or the radiation is detected. A plasma annihilation structure is provided in the optical components, and the plasma annihilation structure is constituted so as to cause the electron-ion recombination inside, above, and/or near the optical components. <P>COPYRIGHT: (C)2008,JPO&INPIT |
