| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device for effectively transferring signal charges in the thickness direction of a substrate. <P>SOLUTION: The solid-state imaging device is provided with a semiconductor substrate, a photoelectric converter, an impurity region, a transfer gate, and a pixel output circuit. The semiconductor substrate includes a wiring layer on a first principal surfac, and a light-receiving region on a second principal surface. The photoelectric converter is arranged in units of pixels in the side of the second principal surface side. The impurity region is provided in the side of the first principal surface, opposing at least a part of the photoelectric converter via an intermediate layer. The transfer gate is arranged in the inside of a semiconductor base material being covered with an insulating film, and transfers signal charges to the impurity region from the photoelectric converting part. The pixel output circuit provides scanning output of the pixel output, on the basis of electrical state of the impurity region. <P>COPYRIGHT: (C)2008,JPO&INPIT |
