| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a TFT provided with a heat sink having a higher radiation effect than in a prior art to realize a semiconductor device of high reliability. SOLUTION: A skewer shaped intrinsic or substantially intrinsic semiconductor region 104 is formed with a mask when a pair of doped regions 102, 103 are formed in an active layer. This region 104 is configured by a portion that practically functions as a channel region and a portion where a channel is not formed and functions as a heat sink. Namely, a radiation effect is improved by forming the heat sink of the same material as in a channel formation region. COPYRIGHT: (C)2008,JPO&INPIT
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