| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the amount of a protecting material filling a via groove becomes uneven in conventional techniques owing to variance in arrangement density of via holes. SOLUTION: A semiconductor device 1 has a via hole 10, redundant via holes 20, and dummy via holes 30. The via hole 10 is connected to a lower-layer wiring 42 (first wiring), and an upper-layer wiring 44 (second wiring) provided to mutually different layers. The redundant via holes 20 and dummy via holes 30 are provided in a circumference of the via hole 10. The redundant via holes 20 are connected to both the lower-layer wiring 42 and upper-layer wiring 44. The dummy via holes 30, on the other hand, are connected to at most one of the lower-layer wiring 42 and upper-layer wiring 44. COPYRIGHT: (C)2008,JPO&INPIT
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