| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which can be improved in kink level by increasing absorption of light in primary mode nearby both end surfaces of a resonator. SOLUTION: The semiconductor laser element which has a resonator surface has a semiconductor substrate 1 of a first conductivity type, a first clad layer 2 of the first conductivity type formed on a surface thereof, an active layer 3 formed on the first clad layer, a second clad layer 4 of a second conductivity type formed on the active layer, and a thin and long ridge 20 of the second conductivity type formed on the second clad layer, a current block layer 22 of the first conductivity type formed to fill a step of the ridge. The current block layer is formed of an absorption film 10 which absorbs laser light leaked from the active layer to the current block layer, when the active layer generates laser light in a region close to the resonator surface including the resonator surface. The laser element has the absorption film and a transmission film 9 transmitting the laser light from the active layer to the current block layer in a region other than the region close to the resonator surface. COPYRIGHT: (C)2008,JPO&INPIT
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