| 摘要 |
PROBLEM TO BE SOLVED: To provide the method of manufacturing a nitride semiconductor light-emitting device capable of suppressing deterioration in characteristics and yield. SOLUTION: The method of manufacturing a nitride semiconductor light-emitting device comprises the steps of forming a groove 11a in an n-type GaN substrate 11, by selectively removing a predetermined region other than the region 11b of the n-type GaN substrate 11 corresponding to the light-emitting portion of a nitride semiconductor element layer 20 formed on the n-type GaN substrate 11 to a predetermined depth; and forming the nitride semiconductor element layer 20 comprising an AlGaN layer 3 on the region 11b and the groove 11a of the n-type GaN substrate 11. Further, the front surface of the n-type GaN substrate 11 comprises a (11-22) plane. COPYRIGHT: (C)2008,JPO&INPIT
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