发明名称 Photoresist Composition and Method Of Forming A Resist Pattern
摘要 A resist material utilized in photolithography patterning includes a first material, and a second material dispersed in the first material. The second material is capable of diffusing to a top surface of the resist material, and has an etch rate different from that of the first material.
申请公布号 US2008063976(A1) 申请公布日期 2008.03.13
申请号 US20070677089 申请日期 2007.02.21
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHANG CHING-YU
分类号 G03C5/00;G03C1/00 主分类号 G03C5/00
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