| 摘要 |
Method for eliminating the precipitates contained in a II-VI solid semiconductor material by annealing, in which said solid semiconductor material is a congruent sublimation solid semiconductor material, and in which the following successive steps are carried out: the solid semiconductor material is heated under an inert gas flow up to a temperature T, between a first temperature T<SUB>1</SUB>, corresponding to the compound II-VI/element VI eutectic, and a second temperature T<SUB>2</SUB>, corresponding to maximum congruent sublimation temperature; the solid material is held at this temperature T under a neutral gas flow for a time period sufficient to eliminate the precipitates; the solid semiconductor material is cooled under an inert gas flow from temperature T to ambient temperature, at a rate such that, during cooling, the solid material merges with its congruent sublimation line; the precipitate-free solid semiconductor material is recovered.
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