| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processor and a plasma processing method which uniformly processes a large-aperture wafer with plasma, and prevents a reaction product from depositing to the inner wall of a top plate, with an ICP coil disposed thereon to prevent generation of particles. <P>SOLUTION: A plurality of coils 31, 32, 33 forming a ICP coil are disposed on the top plate 30 of a chamber 11 provided at a position facing a wafer 21 working surface, spaces 37, 38, 39 are provided in between the plurality of coils 31, 32, 33 for reducing the mutual interference of electromagnetic fields induced across the coils in between the adjacent coils. Faraday shield electrodes 14, 15, 16 are provided on the outer wall of the top plate 30 facing the spaces 37, 38, 39 for capacitively coupling with plasma in the chamber 11 via the top plate 30. <P>COPYRIGHT: (C)2008,JPO&INPIT |
