| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of semiconductor wafer back processing by which high yield can be ensured without cracking of a wafer or paste residue on the substrate or the like, a method of substrate back processing by which high yield can be ensured without cracking a substrate or paste residue or the like, and a radiation-curable pressure-sensitive adhesive sheet which is used for the method of substrate back processing. <P>SOLUTION: The method of semiconductor wafer back processing includes a step of applying a radiation-curable pressure-sensitive adhesive sheet comprising a pressure-sensitive adhesive layer disposed on one side of a base film to a front side of a semiconductor wafer having recesses and protrusions; grinding the back side of the semiconductor wafer in such a state that the radiation-curable pressure-sensitive adhesive sheet is adherent to the front side of the semiconductor; and irradiating the pressure-sensitive adhesive sheet with a radiation to thereby cure the pressure-sensitive adhesive layer, followed by subjecting the ground back side of the semiconductor wafer to a surface treatment. <P>COPYRIGHT: (C)2008,JPO&INPIT |
