| 摘要 |
In one embodiment, a method for depositing a layer containing silicon nitride on a substrate surface is provided which includes positioning a substrate in a process chamber, maintaining the substrate at a predetermined temperature, and exposing the substrate surface to an alkylaminosilane compound and at least one ammonia-free reactant. In another embodiment, a method for depositing a silicon nitride material on a substrate is provided which includes positioning a substrate in a process chamber, maintaining the substrate at a predetermined temperature, and exposing the substrate surface to bis(tertiarybutylamino)silane and a reagent, such as hydrogen, silane and/or disilane. |
