发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent oxidation and corrosion of a seal ring having a top layer made of copper and occurrence of cracks in a circuit forming area at the time of dicing. SOLUTION: A copper wiring layer 114 serving as the top layer of a seal ring 110 is formed in an interlayer insulating film 109 on a silicon substrate 101, and an aluminum wiring layer 141 is formed for covering the top of the copper wiring layer 114. Then, a plasma nitride film layer 121 is formed on the interlayer insulating film 109 and the aluminum wiring layer 141, and an opening 123 penetrating through the plasma nitride film layer 121 is formed between a dicing area and the seal ring. The width of the aluminum wiring layer 141 is formed so as to be wider than the width of the wiring layer 114. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008060606(A) 申请公布日期 2008.03.13
申请号 JP20070295277 申请日期 2007.11.14
申请人 RENESAS TECHNOLOGY CORP 发明人 TOMITA KAZURO
分类号 H01L21/3205;H01L23/52 主分类号 H01L21/3205
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