| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing device by which etching work can be performed by almost uniform amount of work over the entire processing region of a work, and to provide a plasma processing method for performing the etching work for the processing region by using the plasma processing device. <P>SOLUTION: The plasma processing device 1 performs the etching work for a work 10 by an action of an atmospheric pressure (ordinary pressure) plasma, and includes a first electrode 2 supporting the work 10, a second electrode 3 provided while facing the first electrode 2 via the work 10, a gas supply part 5 for supplying a gas G, and a power source circuit 4 which applies a high frequency voltage across both the electrodes 2 and 3 so that the supplied gas G is made to be plasma. A surface of the second electrode 3 facing the work 10 has a sector form. With an apex on the opposite side of an arc of the sector form as the center of rotation, the second electrode 3 is rotatably provided. The etching work is performed while rotating the second electrode 3. <P>COPYRIGHT: (C)2008,JPO&INPIT |
