| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for creating mask drawing data of a semiconductor device with which a lithographic margin can be increased, while taking into consideration the mask dimension dispersion due to the mask process. <P>SOLUTION: The method includes steps of generating a first mask pattern by processing mask data from a design pattern (S101); classifying partial mask patterns, constituting the pattern based on shapes (S102); generating a second mask pattern by resizing each partial mask pattern based on the shapes (S103); calculating the planar shape of a resist pattern to be formed on a substrate, according to lithographic conditions (S104, S105); calculating the difference between the planar shape and the design pattern (S106); determining whether the difference satisfies preliminarily given conditions (S107); when the conditions are not satisfied, correcting a portion that produces the difference that does not satisfy the conditions of the design pattern (S109) and then returning to the step (S101) of generating the first mask pattern; and when the conditions are satisfied, the current first mask pattern is set as the mask drawing data (S108). <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
