| 摘要 |
A semiconductor integrated circuit has a bipolar transistor whose collector is connected to a substrate of an NMOS transistor serving as a protecting transistor. When an ESD event occurs, the bipolar transistor causes the NMOS transistor to be changed into bipolar operation at a low voltage, by supplying current to the substrate of the NMOS transistor. In accordance with this structure, good levels of ESD protecting performance and off leak current of the protecting transistor can both be achieved in the semiconductor integrated circuit.
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