发明名称 Method of processing a substrate, heating apparatus, and method of forming a pattern
摘要 A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.
申请公布号 US2008064226(A1) 申请公布日期 2008.03.13
申请号 US20070976499 申请日期 2007.10.25
申请人 发明人 KAWANO KENJI;ITO SHINICHI;SHIOBARA EISHI
分类号 H01L21/31 主分类号 H01L21/31
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