发明名称 |
Silicon-on Insulator Substrate and Method for manufacturing the Same |
摘要 |
This SOI substrate includes a base substrate which includes a single-crystal semiconductor and an active layer which includes a single-crystal semiconductor and is bonded to the base substrate with an oxide film therebetween. The oxide film is formed only in the active layer. The active layer is formed with a thickness of 10 to 200 nm and a thickness variation throughout the active layer of 1.5 nm or less by etching a surface of the active layer while selectively using only the reactive radicals generated by a plasma etching process.
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申请公布号 |
US2008063840(A1) |
申请公布日期 |
2008.03.13 |
申请号 |
US20050597027 |
申请日期 |
2005.05.25 |
申请人 |
MORITA ETSUROU;SANO RITAROU;ENDO AKIHIKO |
发明人 |
MORITA ETSUROU;SANO RITAROU;ENDO AKIHIKO |
分类号 |
B32B3/00;H01L21/02;H01L21/3065;H01L21/66;H01L21/762;H01L27/12 |
主分类号 |
B32B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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