| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an optical detector that can improve reliability and reduce dark current. <P>SOLUTION: The optical detector 1 as one embodiment of the invention is provided with an n-type InAs substrate 12, an n-type InAs buffer layer 14 formed thereon, an n-type InAs light absorption layer 16 formed on the n-type InAs buffer layer 14, an InAs<SB>X</SB>P<SB>Y</SB>Sb<SB>1-X-Y</SB>cap layer 18 (X≥0, Y>0) formed on the n-type InAs light absorption layer 16, a first inorganic insulation film 20 that is formed on the cap layer 18 and has an opening 20h in the lamination direction, a p-type impurity semiconductor layer 24 that is formed by diffusing p-type impurities from the opening 20h of the first inorganic insulation film 20 and reaches the upper layer of the n-type InAs light absorption layer 16 from the cap layer 18, and a second inorganic insulation layer 22 formed on the first inorganic insulation film 20 and the p-type impurity semiconductor layer 24. <P>COPYRIGHT: (C)2008,JPO&INPIT |
