| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device, wherein by using a porous inter-layer insulating film, reduction of mechanical strength and reduction of adhesiveness with an upper layer or a lower layer are suppressed, and to provide its manufacturing method. <P>SOLUTION: The semiconductor device includes a porous first insulating film 8, which is provided on a substrate and made by decomposing and eliminating a porogen A, a second insulating film 9 provided on the first insulating film 8, and a conductive layer pattern 15', provided on the second insulating film 9 and the first insulating film 8 so as to reach a lower-layer wiring 6. The first insulating film 8 has a non-porous region 8A, in a condition where the porogen A remains. A method for manufacturing the semiconductor device is also disclosed. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
