| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor wafer and the method of manufacturing the same, in which "auto doping", "halo", and disadvantageous "nano-topography" in the front and rear faces are sufficiently prevented. <P>SOLUTION: In the method of manufacturing a semiconductor wafer provided with a front face covered by chemical vapor deposition (CVD), and a polished or etched rear face, the nano-topology of the rear face is made not larger than 5 nm representing the height variation as PV(=peak to valley) by conducting a gaseous material from the region spreading over the rear face of the wafer to a region spreading over the rear face of the susceptor through almost only the hole of the susceptor. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
