| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein a fine working by a semiconductor manufacturing process cannot be applied to the section of a high breakdown-strength element, and processes are increased, when a logic circuit composed of a low breakdown-strength element driven by a low-voltage driving and the high breakdown-strength element resisting a driving voltage are configured by an IC in the same chip. SOLUTION: A level-shift circuit has p-channel first and second MOS transistors connecting source terminals to a power-supply terminal VDD, n-channel third and fourth MOS transistors connecting source terminals to a ground, and an n-channel fifth MOS transistor connecting the source terminal to a drain for the third MOS transistor. The level-shift circuit further has an n-channel sixth MOS transistor connecting the source terminal to the drain for the fourth MOS transistor, and p-channel seventh and eighth MOS transistors connecting sources to a second power-supply terminal VD. COPYRIGHT: (C)2008,JPO&INPIT
|
